EV/HEV Industrial SiC Energy Storage IPM Discrete Device Wafer
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A1 Series

Vehicle IGBT module-A1

General Description:

Voltage level: 750V/1200V

Current level: 300A/400A/600A

Circuit topology: three-phase full bridge

Micro groove gate/field termination technology

Low saturation pressure drop

Low switching loss

high reliability

High RBSOA capability

Applications:

New energy vehicles

Parameter

Circuit Diagram:

Full Bridge

Specification

RedPower

Part No.

HousingChip TechnologyV CES(V)I c(nom)(A)VCE(sat)(V)Size No.

image.png

RG300F08A1M7RA1MPT-FS750 V300 A1.352

RG400F08A1M7RA1MPT-FS750 V400 A1.352

RG400F08A1M7R_PA1MPT-FS750 V400 A1.351

 

RG600F08A1M7RA1MPT-FS750 V600 A1.352
RG300F12A1M7RY_PA1MPT-FS1200 V300 A1.551


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