EV/HEV Industrial SiC Energy Storage IPM Discrete Device Wafer
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A4 Series

Automotive IGBT module-A4

General Description:

Voltage level: 750V

Current level: 600A

Circuit topology: three-phase full bridge

Micro groove gate/field termination technology

Low saturation pressure drop

Low switching loss

high reliability

High RBSOA capability

Applications:

New energy vehicles


Parameter

Circuit Diagram:

Full Bridge

Specification

RedPower

Part No.

HousingChip TechnologyV CES(V)I c(nom)(A)VCE(sat)(V)Size No.

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RG600F08A4M7R_E

A4MPT-FS750 V600 A1.352


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