EV/HEV Industrial SiC Energy Storage IPM Discrete Device Wafer
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M Series

Vehicle IGBT module-M

General Description:

Voltage level: 1200V/1700V

Current level: 300A/450A/600A/900A

Circuit topology: half bridge

Micro groove gate/field termination technology

Low saturation pressure drop

Low switching loss

high reliability

High RBSOA capability

High short-circuit tolerance

Applications:

New energy vehicles

Frequency converter

Photovoltaics, wind energy

UPS、SVG、 Energy storage


Parameter

Circuit Diagram:

Half Bridge

Specification

RedPower

Part No.

HousingChip TechnologyV CES(V)I c(nom)(A)VCE(sat)(V)Size No.


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RG300B12MM7R

MMPT-FS1200 V300 A1.551


RG450B12MM7R

MMPT-FS1200 V450 A1.551


RG600B12MM7R

MMPT-FS1200 V600 A1.551



RG600B12MM7RY

MMPT-FS1200 V600 A1.551

RG900B12MM7RY

MMPT-FS1200 V900 A1.551


RG450B17ML7RY

MMPT-FS1700 V450 A1.551

RG600B17ML7RY

MMPT-FS1700 V600 A1.551

RG900B17ML7RY

MMPT-FS1700 V900 A1.551


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