EV/HEV Industrial SiC Energy Storage IPM Discrete Device Wafer
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TGQ&TGY

TO-247/247PLUS

General Description:

Voltage level: 1200V/750V

Current level: 140A/200A/275A

Circuit topology: 1 unit

Micro groove gate/field termination technology

Low saturation pressure drop

Low switching loss

high reliability

High RBSOA capability

High short-circuit tolerance

Applications:

Energy Storage


Parameter

Circuit Diagram:

Single switch

Specification

RedPower

Part No.

HousingChip TechnologyV CES(V)I c(nom)(A)VCE(sat)(V)Size No.

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TGQ200M08T

QTrench750 V200 A1.351

TGQ140H12T

QTrench1200 V140 A1.901

TGY140H12T

YTrench1200 V140 A1.902


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