Automotive SiC module-A6
General Description:
Voltage level: 1200V
Low saturation pressure drop
Low switching loss
high reliability
High RBSOA capability
Applications:
New energy vehicles
Circuit Diagram: Full Bridge | Specification | RedPower Part No. | Housing | SiC Chip Technology | V DSS(V) | R DS(on)(mΩ) | Size No. |
| RM023F12A6TB | A6 | Trench gate | 1200 V | 2.3 | 1 | |
RM017F12A6TB | A6 | Trench gate | 1200 V | 1.7 | 1 | ||
RM019F12A6TM | A6 | Trench gate | 1200 V | 1.9 | 1 |
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