EV/HEV Industrial SiC Energy Storage IPM Discrete Device Wafer
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A3 Series

IGBT module-A3

General Description:

Voltage level: 750V

Current level: 400A/600A

Circuit topology: three-phase full bridge

Micro groove gate/field termination technology

Low saturation pressure drop

Low switching loss

high reliability

High RBSOA capability

Applications:

Energy Storage


Parameter

Circuit Diagram:

Full Bridge

Specification

RedPower

Part No.

HousingChip TechnologyV CES(V)I c(nom)(A)VCE(sat)(V)Size No.


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RG400F08A3M7R_p

A3MPT-FS750 V400 A1.351


RG600F08A3M7R_P

A3MPT-FS750 V600 A1.351


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